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Calculation of Auger Coefficients for III–V Semiconductors with Emphasis on GaSb
Author(s) -
Haug A.,
Kerkhoff D.,
Lochmann W.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890204
Subject(s) - semiconductor , auger , valence band , band gap , semimetal , conduction band , valence (chemistry) , condensed matter physics , atomic physics , physics , chemistry , quantum mechanics , electron
Abstract In contrast to former approximate treatments an exact calculation of Auger coefficients for III–V compounds is given taking fully into account the restrictions given by the energy and wave vector conservation. In particular the valence band process involving the split‐off band is considered which is essential for semiconductors with nearly equal energy gap and valence band splitting like GaSb. The well‐known conduction band process follows as a special case. The result for GaSb is in reasonable agreement with experiment.