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The Influence of Acoustic Phonon Disturbances on the Conductivity of Piezo‐Electric Semiconductors
Author(s) -
Kocevar P.,
Fitz E.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890129
Subject(s) - condensed matter physics , ohmic contact , phonon , semiconductor , electron , degenerate semiconductor , degenerate energy levels , phonon drag , doping , electrical resistivity and conductivity , physics , materials science , quantum mechanics , electrode , seebeck coefficient
A closed expression is given for mutual electron‐phonon drag and heating corrections to the steady‐state mobility of weakly drifting non‐degenerate carriers in a polar extrinsic semiconductor of standard band structure with dominant piezo‐electric, acoustic deformation potential, and ionized impurity scattering. The approximations involved are discussed and their range of validity is explicitly stated in terms of electron‐phonon coupling constants, non‐electronic phonon relaxation times, carrier concentration, and lattice temperature. A detailed analysis of n‐GaAs yields corrections of up to 15% to the ohmic conductivity for moderate doping and for lattice temperatures around 20 K. Corrections of more than 20% can only be expected for the non‐ohmic (hotelectron) regime and lattice temperatures below 20 K.