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Interband Faraday Ellipticity in Germanium
Author(s) -
Kessler F. R.,
Metzdorf J.,
Zurek W.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890126
Subject(s) - faraday effect , condensed matter physics , germanium , exciton , doping , physics , magnetic field , faraday cage , quantum mechanics , optoelectronics , silicon
The interband Faraday ellipticity (IFE) at the E 0 transition in germanium single crystals is measured at T = 300 K and B = 2 T. Even at room temperature the oscillatory IFE is due to transitions to exciton states. This is proved as follows: firstly, the IFE of intrinsic material shows characteristic deviations from a theoretical Landau spectrum. Secondly, the doping dependence of the IFE shows the screening influence of free carriers. The IFE is no longer oscillatory at doping concentrations above 10 17 cm −3 . Only the effect of the spin‐splitting of the band edge in the magnetic field is to be seen. By measuring the interband Faraday rotation (IFR) and comparing it with the rotation calculated from ellipticity according to a Kramers‐Kronig relation, the IFR at the E 0 transition is shown to be due to the same origin as the IFE.