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Thermalization of the Electron—Hole Plasma in GaAs.
Author(s) -
Goebel E. O.,
Hildebrand O.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880231
Subject(s) - thermalisation , electron , excitation , electron hole , plasma , atomic physics , dissipation , luminescence , materials science , condensed matter physics , physics , optoelectronics , quantum mechanics , thermodynamics
The band‐to‐band luminescence lineshape of the electron—hole plasma emission in GaAs is analyzed as a function of the excess energy of the photocreated electrons and holes. This yields experimental data for the dependence of the effective carrier temperature of the electron—hole plasma on the excess excitation energy for high electron and hole densities. Carrier temperatures as low as 5 K can be obtained in the case of resonant excitation. A discussion of these data in terms of the possible energy dissipation processes shows that hole—phonon interaction gives an important contribution to the cooling of the carrier system.