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The Effect of Oxygen Impurities on the Electron Tunneling
Author(s) -
Otschik P.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880221
Subject(s) - pseudopotential , quasiparticle , quantum tunnelling , condensed matter physics , impurity , niobium , superconductivity , electron , density of states , london penetration depth , oxygen , coulomb , penetration depth , physics , ion , chemistry , quantum mechanics , organic chemistry
The effect of dissolved oxygen ions in the vicinity of the interface between tunnel barrier and superconductor on the tunnel density of states and on the parameters of the Eliashberg equations is investigated. Because of existing solvent profiles averaged quantities are measured, as the tunneled quasiparticle averages over the properties in the range of mean penetration depth. Therefore, the theoretical tunnel density of states and the Eliashberg equations are modified. Assuming a solvent profile and a reasonable Coulomb pseudopotential the effective phonon density of states α 2 F (b) of bulk material is obtained. The set of equations is applied to niobium.