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Magnetic Field Dependence of the Photoconductivity in Amorphous Silicon
Author(s) -
Mell H.,
Movaghar B.,
Schweitzer L.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880217
Subject(s) - photoconductivity , recombination , condensed matter physics , magnetic field , amorphous silicon , relaxation (psychology) , spin (aerodynamics) , field (mathematics) , materials science , conductivity , silicon , chemistry , physics , optoelectronics , crystalline silicon , thermodynamics , biology , biochemistry , mathematics , quantum mechanics , pure mathematics , gene , neuroscience
We report the first observation of magnetic field induced changes in the photoconductivity σ p of a‐Si produced by the glow discharge technique. The relative change of σ p in fields H 0 up to 10 kG is of the order of 1%. The dependence of σ p on the magnitude of H 0 is similar to that of the dark conductivity in evaporated a‐Si and a‐Ge, suggesting that the same type of mechanism is responsible for both phenomena. We explain the change of σ p in terms of a spin dependent pair recombination model in which the recombination rate of triplet pairs is correlated with the spin relaxation rate which depends on the applied magnetic field H 0 .