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Effect of Pressure on Hole Effective Masses in GaAs
Author(s) -
Alekseeva Z. M.,
Vyatkin A. P.,
Karavaev G. F.,
Krivorotov N. P.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880138
Subject(s) - conduction band , effective mass (spring–mass system) , condensed matter physics , thermal conduction , diode , materials science , physics , atomic physics , optoelectronics , thermodynamics , nuclear physics , quantum mechanics , electron
The effect of pressure on light and heavy hole masses in GaAs is studied. A theoretical calculation of the dependence of the hole masses on pressure is carried out taking into account the influence of the lowest conduction band levels Γ 1 cand Γ 15 c . The experimental values are obtained from the change of the tunnel diode characteristics with pressure. The agreement of the calculated values with the experimental data is good for the light holes.