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Influence of Finite Carrier Concentrations on the Electronic Spectrum of a Ferromagnetic Semiconductor
Author(s) -
Matlak M.,
Nolting W.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880126
Subject(s) - band diagram , ferromagnetism , condensed matter physics , limiting , conduction band , electron , semiconductor , spectrum (functional analysis) , magnetic semiconductor , limit (mathematics) , physics , materials science , electronic band structure , quantum mechanics , mathematics , mathematical analysis , mechanical engineering , engineering
Starting from the atomic limit‐solution of the s‐f model a diagram technique is used to obtain the one‐particle spectrum of a ferromagnetic semiconductor, valid first of all for low carrier concentration n in the small bandwidth case. It turns out that the conduction band is split, due to the s‐f interaction, into two subbands for every electron spin direction. The lower edge of the lower ↑subband is shifted to higher energies with increasing band occupation explaining herewith recent experiments on EuO. The approximation fulfills the exactly calculable ( n = 0, T = 0)‐limiting case.