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Hot Electrons in Zero‐Gap Semiconductors with Non‐Parabolic Electronic Band Structure
Author(s) -
Beneslavskii S. D.,
Ziep O.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880125
Subject(s) - condensed matter physics , electron , electric field , coulomb , liquid helium , scattering , band gap , renormalization , physics , semiconductor , momentum (technical analysis) , zero (linguistics) , dielectric , relaxation (psychology) , atomic physics , helium , quantum mechanics , psychology , social psychology , linguistics , philosophy , finance , economics
Mobility μ and concentration n of electric‐field‐induced hot electrons are investigated in zero‐gap HgCdTe with linear band structure at liquid helium temperatures. Taking into account the admixture of s‐like wave functions, dielectric anomalies, and the renormalization of the heavy‐hole spectrum it is shown that Coulomb scattering is the dominant mechanism for relaxation of momentum and energy at 4.2 K. Using rate equations and an electron temperature model the behaviour of μ and n is calculated up to electric field strength of 1.5 V/cm.