The Semiconductor–Semimetal Transition in Bi 1− x Sb x Alloys with x ≧ 0.22

In Bi 1− x Sb, alloys with x = 0.13 to 0.25 the electrical transport properties (electrical resistance, magnetoresistance, and Hall effect) in the temperature interval T = 1.8 to 77 K in weak magnetic fields ( μ B ≪ 1) are investigated. In alloys with x = 0.19 and x = 0.23 the dependence of the galvanomagnetic properties on the hydrostatic pressure are also investigated. The rapid increase of the charge‐carrier concentration in alloys with x > 0.22 and the qualitatively different pressure dependence of the gelvanomagnetic properties for this two alloys are explained by the overlapping of the conduction band at L with a valence band at an other point of the Brillouin zone, which begins at x ≈ 0.22. A semimetal‐semiconductor transition is detected in Bi 1− x Sb, alloys with x > 0.22 under high hydrostatic pressure.