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The Semiconductor–Semimetal Transition in Bi 1− x Sb x Alloys with x ≧ 0.22
Author(s) -
Kraak W.,
Oelgart G.,
Schneider G.,
Herrmann R.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220880111
Subject(s) - condensed matter physics , semimetal , magnetoresistance , hydrostatic pressure , brillouin zone , materials science , electrical resistivity and conductivity , hall effect , semiconductor , band gap , valence band , magnetic field , physics , thermodynamics , optoelectronics , quantum mechanics
In Bi 1− x Sb, alloys with x = 0.13 to 0.25 the electrical transport properties (electrical resistance, magnetoresistance, and Hall effect) in the temperature interval T = 1.8 to 77 K in weak magnetic fields ( μ B ≪ 1) are investigated. In alloys with x = 0.19 and x = 0.23 the dependence of the galvanomagnetic properties on the hydrostatic pressure are also investigated. The rapid increase of the charge‐carrier concentration in alloys with x > 0.22 and the qualitatively different pressure dependence of the gelvanomagnetic properties for this two alloys are explained by the overlapping of the conduction band at L with a valence band at an other point of the Brillouin zone, which begins at x ≈ 0.22. A semimetal‐semiconductor transition is detected in Bi 1− x Sb, alloys with x > 0.22 under high hydrostatic pressure.