Premium
Electronic Structure of Silicon with Non‐Spherical Potentials for the Two Basis Atoms
Author(s) -
Kim C. K.,
Kunz A. B.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220870243
Subject(s) - antisymmetric relation , pseudopotential , silicon , basis (linear algebra) , tetrahedron , electronic band structure , conduction band , atomic physics , distortion (music) , molecular physics , band gap , materials science , condensed matter physics , chemistry , physics , crystallography , quantum mechanics , geometry , mathematics , optoelectronics , electron , amplifier , cmos , mathematical physics
The potential difference of two basis atoms, which arises from the tetrahedral bonding, is included in the calculation of the silicon band structure using the local empirical pseudopotential method (EPM). It is shown that the small antisymmetric form factor due to the potential distortion gives substantial contribution to high lying conduction bands.