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Theory of Resonance Scattering for Electron–Phonon Interaction in Doped Semiconductors with Zincblende Structure
Author(s) -
Singh Mahiradhwaj
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220870139
Subject(s) - condensed matter physics , resonance (particle physics) , scattering , degenerate energy levels , electron , phonon , physics , semiconductor , bound state , relaxation (psychology) , phonon scattering , spin (aerodynamics) , atomic physics , electron paramagnetic resonance , chemistry , quantum mechanics , social psychology , psychology , thermodynamics
Abstract Expressions for the resonance scattering of phonons by bound donor electrons are obtained in internally strained n‐type semiconductors with ZB structure for the situation, when, besides the usual spin–orbit splitting of the sixfold degenerate state, derived from the triplet, into a quartet and lower lying doublet, the quarted state further splits into two Kramers doublets owing to the internal and dynamic strains present in the crystal. Similarly expressions for the resonance scattering of phonons by bound donor electrons are obtained in presence of an external magnetic field for the most general case when the degeneracy of each Kramers doublet splits into two singlet states. The expressions obtained for the resonance scattering relaxation rates for internally strained semiconductors are used to explain the thermal conductivity of n‐type GaAs and n‐type GaSb. Excellent agreement between theory and experiment is obtained for both the samples.