Premium
Photoconductivity in a‐GeSe
Author(s) -
Vescan L.,
Stötzel H.,
Stoica T.,
Kottwitz A.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220870128
Subject(s) - photoconductivity , activation energy , materials science , photon energy , electron , fermi level , thermal conduction , condensed matter physics , conduction band , atomic physics , optoelectronics , photon , optics , chemistry , physics , quantum mechanics , composite material
The temperature, illumination, frequency, and photon energy dependences of the photoconductivity in a‐GeSe films are investigated. The conduction activation energy is 0.95 eV, the photoconductivity edge lies at 1.4 eV. The photoconductivity is field‐independent up to 3 × 10 4 V/cm and independent of the frequency of the chopping light up to at least 10 3 Hz. The activation energy of the photoconductivity decreases with decreasing temperature from 0.3 eV to almost zero. The experimental curves are consistent with activated mobilities for electrons and holes and recombination by both a direct and an indirect mechanism. A value of 4 × 10 13 cm −3 for the density of localized states at the Fermi level is obtained.