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Model Calculations for the Anisotropy Formation by Resputtering Processes during the Growth of Amorphous GdCo Films
Author(s) -
Müller H.R.,
Perthel R.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220870124
Subject(s) - anisotropy , amorphous solid , condensed matter physics , materials science , magnetic anisotropy , sputtering , perpendicular , crystallography , thin film , chemistry , magnetization , physics , nanotechnology , magnetic field , optics , geometry , mathematics , quantum mechanics
In order to understand the formation of a magnetic anisotropy during the preparation of amorphous GdCo films by bias sputtering, model calculations are carried out for simple cubic or hexagonal close packed lattices. A structural anisotropy is always obtained, if differences in the binding energies of CoCo, GdCo, and GdGd pairs are assumed. The anisotropy can be described as a difference of the pair numbers parallel and perpendicular to the film plane. Sign and magnitude of the anisotropy depend strongly on the surface configurations involved in the resputtering process (adatoms or inner atoms) and on the binding energies assumed for the different pairs.