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Negative Magnetoresistance in Indium Arsenide in the Extreme Quantum Limit
Author(s) -
Mansfield R.,
Azhdarov G.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220870119
Subject(s) - magnetoresistance , condensed matter physics , quantum limit , magnetic field , indium arsenide , scattering , indium , limit (mathematics) , field (mathematics) , gallium arsenide , materials science , physics , quantum , quantum mechanics , optoelectronics , mathematical analysis , mathematics , pure mathematics
The results of magnetoresistance measurements of n‐InAs with carrier concentration ≈ 10 16 cm −3 are given in a longitudinal magnetic field up to 40 kG and the temperature range from 20 to 110 K. In a large magnetic field a negative magnetoresistance is observed over the whole investigated temperature range. Under the extreme quantum limit conditions and when impurity scattering predominates, a comparison between the experiment and Argyres and Adams' theory with allowance of Dubinskaya for forward scattering is made and is discussed.