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Inadequacy of the Direct Interband Transition Scheme Applied to Valence Semiconductor Fundamental Absorption Spectra
Author(s) -
Shatalov V. M.,
Telezhkin V. A.,
Tolpygo K. B.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220870110
Subject(s) - brillouin zone , semiconductor , exciton , valence (chemistry) , absorption (acoustics) , spectral line , atomic physics , absorption spectroscopy , electron , physics , condensed matter physics , optics , quantum mechanics
The appearance of areas with a nearly constant interband difference E G ( k ) near the L‐ and K‐points of the Brillouin zone, corresponding to the absorption peaks E 1 and E 2 , is considered within the model of an electron in a periodic field. Large values of the reduced masses μ‖ result in relatively deep levels of the Wannier‐Mot texciton (≈ 0.1 eV for L and ≈ 1 eV for K). To obtain absorption frequencies in agreement with experiment one has to redetermine the periodic potential W g , as the interband distance at the points mentioned above must exceed the energy of the corresponding absorption peak by the value of the exciton binding energy.