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Carrier mobility in ferromagnetic semiconductors
Author(s) -
Patil C. G.,
Krishnamurthy B. S.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860236
Subject(s) - condensed matter physics , scattering , curie temperature , magnon , ionized impurity scattering , ferromagnetism , electron mobility , magnetic semiconductor , electron , semiconductor , carrier scattering , hall effect , physics , magnetic field , doping , quantum mechanics
The electron mobility in ferromagnetic semiconductors below the Curie temperature incorporating electron–two‐magnon scattering is calculated besides the usual non‐magnetic scattering using the variational procedure. It is found that the mobility due to two‐magnon process is proportional to T −1/2 ( T lattice temperature). The calculation is compared with the experimental Hall mobility data in CdCr 2 Se 4 (In doped) accepting ionized impurity scattering as the non‐magnetic scattering. The calculated mobility variation with temperature is in close agreement with the experimental data indicating the importance of electron–two‐magnon scattering mechanism.