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Phonon scattering and effect of dislocations on the low‐temperature phonon conductivity in Ge
Author(s) -
Singh M.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860232
Subject(s) - condensed matter physics , phonon , germanium , dislocation , scattering , phonon scattering , electron , conductivity , materials science , physics , silicon , quantum mechanics , metallurgy
It is shown that the theory, which is based on the scattering of phonons by bound dangling electrons associated with the dislocation core, gives excellent agreement between the theoretical and experimental results of phonon conductivity for deformed germanium. No adjustable physical parameter is used in the calculation except the difference of energy splitting. From a comparison of theory and experiment is found that the density of dangling electrons is directly proportional to the dislocation density.