Premium
The disorder scattering in zincblende narrow‐gap semiconducting mixed crystals
Author(s) -
Kossut J.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860220
Subject(s) - semiconductor , scattering , condensed matter physics , band gap , relaxation (psychology) , physics , electron scattering , semiconductor materials , materials science , quantum mechanics , psychology , social psychology
A formula for the relaxation time for the disorder scattering mechanism is derived taking into account the complexities of the narrow‐gap zincblende semiconductor band structure. The main features of this formula are discussed showing the importance of the actual form of the electron wave functions appropriate for narrow‐gap semiconductors. Other theoretical approaches to the problem of disorder scattering are reviewed briefly.