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Parametric excitation in Kane's semiconductors
Author(s) -
Anh Vo Hong,
Dat Nguyen Nhu
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860219
Subject(s) - excitation , parametric statistics , semiconductor , formalism (music) , instability , physics , condensed matter physics , atomic physics , quantum mechanics , mathematics , statistics , art , musical , visual arts
The parametric excitation of electromagnetic vibrations in narrow‐gap semiconductors with nonparabolic energy dispersion defined by Kane's model is investigated using the quantum formalism proposed previously. The numerical estimates performed for the typical sample of n‐InSb crystals in different cases show that the deviation from parabolicity lowers the instability threshold field values by about one order of magnitude.