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Resonant Raman scattering in InP
Author(s) -
Sinyukov M.,
Trommer R.,
Cardona M.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860216
Subject(s) - raman scattering , phonon , raman spectroscopy , deformation (meteorology) , x ray raman scattering , scattering , materials science , phonon scattering , condensed matter physics , atomic physics , photon , molecular physics , optics , physics , composite material
Measurements are made of resonant first‐ and second‐order Raman scattering by phonons in InP for photon energies from 1.75 to 3.05 eV. The behaviour of all observed resonances can be well explained by effects due to the E 0 + Δ 0 and the E 1 band gaps. A comparison of the first‐order deformation potential at E 1 with the one of GaAs is made and several electron‐two‐phonon deformation potentials are evaluated.