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Ionized impurity scattering in semiconductors
Author(s) -
Gerlach E.,
Rautenberg M.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860205
Subject(s) - scattering , impurity , ionized impurity scattering , ionization , debye , electron , condensed matter physics , atomic physics , semiconductor , mott scattering , range (aeronautics) , materials science , physics , small angle neutron scattering , optics , quantum mechanics , ion , neutron scattering , composite material
In the Brooks‐Herring‐formula the scattering centres are assumed to be independent. The range of validity of this assumption is investigated. For this purpose the scattering of electrons by a pair of impurities is considered as a function of its internal separation and its orientation with respect to the electronic current. For a separation larger than about the Debye‐Hückel screening length the ionized impurities are found to act as independent scattering centres. For smaller separations the interaction of the scattering centres cannot be neglected.