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To the theory of the tunnel effect in a semiconductor in constant electric and magnetic fields
Author(s) -
Oleinik V. P.,
Sinyak V. A.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860137
Subject(s) - quantum tunnelling , constant (computer programming) , condensed matter physics , physics , instability , semiconductor , basis (linear algebra) , electron , ground state , magnetic field , electric field , quantum , quantum mechanics , mathematics , geometry , computer science , programming language
Interband tunnelling in a semiconductor in constant electric E and magnetic H fields is studied in the framework of the two‐band model. An accurate formula is deduced for the tunnel current on the basis of the quantum transition theory in systems with unstable ground state, which is correct for arbitrary values of magnitude and direction of E and H . Giving an example of the two‐band model, those striking features of the dynamical description of the physical system which are due to the instability of its growth and state concerning the creation of electron–hole pairs are discussed.