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ESR From boron in silicon at zero and small external stress I. Line positions and line structure
Author(s) -
Neubrand H.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860131
Subject(s) - hamiltonian (control theory) , boron , silicon , zero (linguistics) , condensed matter physics , acceptor , crystal (programming language) , physics , materials science , mathematics , mathematical optimization , linguistics , philosophy , optoelectronics , nuclear physics , computer science , programming language
ESR observations at zero external stress of the shallow acceptor centre boron in silicon are reported for the first time. These observations have become possible by the high degree of crystal perfection attainable today in Si‐crystal growth. The spectrum, its angular and uniaxial pressure dependence are interpreted in terms of a spin Hamiltonian given by Bir. Additional terms in this spin Hamiltonian are shown to be necessary to account for the experimental result and to explain the differences between the spin Hamiltonian constants derived by different authors.