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Electrical properties of TlTe single crystals
Author(s) -
Ikari T.,
Hashimoto K.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220860127
Subject(s) - seebeck coefficient , condensed matter physics , electrical resistivity and conductivity , semimetal , magnetoresistance , materials science , hall effect , conduction band , thermal conduction , electron , valence band , phase (matter) , single phase , thermoelectric effect , band gap , chemistry , magnetic field , physics , thermodynamics , organic chemistry , quantum mechanics , composite material , engineering , electrical engineering
Single crystals of TlTe are grown from Te‐rich melt at 280°C. Resistivity, Hall coefficient, magnetoresistance, and thermoelectric power are measured. The experimental results are explained by the assumption of an uncompensated semimetal model, where the band overlapping energy between conduction and valence bands E 0 is 0.20 eV in the high‐temperature phase above 172 K and 0.10 eV in the low‐temperature phase. The effective masses of electrons and holes are m e *= 1.0 m 0 and m h *= 1.5 m 0 , respectively, in both the temperature phases.