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Electron states associated with the core region of the 60° dislocation in silicon and germanium
Author(s) -
Marklund S.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850232
Subject(s) - germanium , dislocation , silicon , condensed matter physics , burgers vector , core (optical fiber) , materials science , dislocation creep , direct and indirect band gaps , crystallography , band gap , physics , optoelectronics , chemistry , composite material
Using the tight‐binding method the localized states connected with the 60° dislocation in silicon and germanium are calculated. Periodic arrays of large unit cells each containing two 60° dislocations with Burgers vectors of opposite sign are considered. As a consequence of the broken bonds a one‐dimensional band occurs in the direction of the dislocation line for both silicon and germanium. The dilatation region of the dislocation core is also found to cause a second dislocation band to appear below the conduction band edge.