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On the nature of the top of the valence band in layered Mo and W dichalcogenides
Author(s) -
Fonville R. M. M.,
Geertsma W.,
Haas C.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850226
Subject(s) - valence band , materials science , valence (chemistry) , engineering physics , nanotechnology , optoelectronics , physics , band gap , quantum mechanics
The magnetic susceptibilities of single crystals of MoS 2 , MoSe 2 , α‐MoTe 2 , and WSe 2 are measured between 2 and 300 K. Above 60 K the susceptibilities are temperature independent and strongly anisotropic. The observed anisotropy is attributed to Van Vleck temperature‐independent paramagnetism of the d electrons. The electrical resistivity and the Hall effect of As‐doped p‐type single crystals of MoS 2 , MoSe 2 , α‐MoTe 2 , WS 2 , and WSe 2 are measured between 2 and 300 K. Electron paramagnetic reasonance of p‐type crystals of MoS 2 , MoSe 2 , α‐MoTe 2 , WS 2 , and WSe 2 shows strongly anisotropic g ‐values. An explanation of these g ‐values is not possible in terms of only metal d‐orbitals or only chalcogen p‐orbitals, but requires a strong mixing of d‐ and porbitals in the top of the valence band.