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Excitons in gallium sulphide
Author(s) -
Belenkii G. L.,
Godzhaev M. O.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850205
Subject(s) - exciton , gallium , photoluminescence , spectral line , absorption spectroscopy , anisotropy , phonon , luminescence , absorption (acoustics) , polarization (electrochemistry) , atomic physics , chemistry , materials science , molecular physics , condensed matter physics , physics , optics , optoelectronics , composite material , organic chemistry , astronomy
Strong evidences for existence of indirect excitons in GaS are obtained as a result of an analysis of differential absorption and photoluminescence spectra registered in the 4.2 to 100 K temperature range in polarized light. The location of the exciton band in gallium sulphide E exc = (2594 ± 2) meV and the energy of phonons which take part in indirect transitions are determined. Lines which are interpreted as a result of non‐phonon transitions are observed in the absorption and emission spectra. Lines which arise from the decomposition of bound excitons are found in emission spectra as well. It is shown that polarization pecularities of GaS absorption and luminescence spectra are explained in terms of the band scheme of gallium selenide which is structurally analogous to GaS. The possible nature of the anisotropy of excitons in GaS is discussed.