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Raman scattering in some III‐VI layer single crystals
Author(s) -
Faradev F. E.,
Gasanly N. M.,
Mavrin B. N.,
Melnik N. N.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850142
Subject(s) - raman spectroscopy , crystal (programming language) , force constant , raman scattering , molecular physics , layer (electronics) , chemistry , molecular vibration , spectral line , vibration , materials science , atomic physics , crystallography , condensed matter physics , optics , molecule , physics , nanotechnology , quantum mechanics , organic chemistry , computer science , programming language
Polarized Raman spectra of InSe and InS crystals are obtained, the assignment of frequencies is given, and atomic displacements are found at all normal vibrations. In the InSe crystal, force constants of interaction of In‐Se and In‐In atomic planes are evaluated. It is shown that the Raman spectrum of InS has a doublet nature typical for layer crystals. The frequencies of rigid‐layer modes forbidden in the Raman spectrum are calculated in the InS crystal. It is found that interlayer force constants in the InS crystal are only 5 to 10 times smaller than the intralayer covalentbond force constants.