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Temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. I. Theoretical results
Author(s) -
Pässler R.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850122
Subject(s) - semiconductor , range (aeronautics) , atmospheric temperature range , atomic physics , charge carrier , charge (physics) , condensed matter physics , chemistry , physics , materials science , thermodynamics , quantum mechanics , composite material
Proceeding from the recently developed semiempirical theory of Shockley‐Read processes a short survey of theoretical predictions is given on the temperature dependences of the nonradiative multiphonon carrier capture ejection properties of deep traps in semiconductors. At low temperatures the corresponding capture cross‐sections are but weakly dependent on temperature and vary in the cases of attraction, neutrality, and repulsion as T −1 , T −1/2 , and T −7/6 × × exp {−3[θ/ T ] 1/3 }, respectively, where the parameter θ depends on the magnitude of the centre charge. At high temperatures, activation‐type dependences exp {− U / kT } play an important part where the activation energies U depend on the actual structure of the given traps. On the basis of the complete theory the temperature dependences of the capture cross‐sections and ejection frequency factors in the range of intermediate temperatures are visualized graphically.