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On the theory of photon‐induced DC hopping conductivity in disordered semiconductors
Author(s) -
Keiper R.,
Schuchardt R.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850116
Subject(s) - variable range hopping , condensed matter physics , percolation theory , formalism (music) , percolation (cognitive psychology) , physics , semiconductor , conductivity , directed percolation , percolation threshold , excited state , photon , phonon , electron , materials science , statistical physics , quantum mechanics , electrical resistivity and conductivity , art , musical , visual arts , neuroscience , biology
Based on the Kubo formalism a detailed discussion of the static hopping transport is given for the case that the electron transitions between localized gap states are caused by intense illumination of the specimen. The statistical correlations of the excited hopping system taking into account by means of the percolation theory, the resulting conductivities in the low‐frequency and highfrequency limits are analyzed with respect to their spectral dependences and their orders of magnitude in relation to Mott's phonon‐induced variable range hopping. Apart from its purely theoretical interest this new mechanism of photoconduction should also deserve experimental interest, in particular, because of the possibility of a frequency‐controlled „reading” of the electronic density of states within the mobility gap.