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Transient photoconduction in a polydiacetylene single crystal determination of transit time, free lifetime, and recombination time of charge carriers
Author(s) -
Reimer B.,
Bässler H.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850115
Subject(s) - charge carrier , photocurrent , materials science , single crystal , photoconductivity , recombination , electron mobility , crystal (programming language) , transit time , carrier lifetime , excitation , molecular physics , free electron model , transient (computer programming) , electron , analytical chemistry (journal) , optoelectronics , laser , optics , chemistry , crystallography , physics , chromatography , quantum mechanics , silicon , computer science , transport engineering , programming language , gene , engineering , operating system , biochemistry
Photocurrent transients in polydiacetylene‐bis(toluenesulfonate) single crystals are investigated under 1060, 694, and 347 nm laser excitation and different sample geometry. With thick samples pulse decay is controlled by electron—hole recombination, the recombination coefficient being γ = (4 ± 1) X 10 −6 cm 3 s −1 . Under 1060 nm irradiation silver‐contacted sandwich samples, typically 100 μm thick, show transit signals originating from injected carriers. The mobility is (4.8 ± 1.5) cm 2 /Vs. It varies as T 0.5 as expected for carrier transport in a one‐dimensional band if scattering is by acoustic phonons. The carrier free lifetime depends on crystal preparation. For sandwich samples furnished by polishing monomer crystals it can be as low as 35 ns at 298 K.