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A study of the kinetics of recombination radiation of CdS and CdSe crystals
Author(s) -
Boiko G. A.,
Dneprovskii V. S.,
Kraevskii M. V.,
Marinova K.,
Oak S. M.,
Silina E. K.,
Fokin V. S.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850111
Subject(s) - exciton , picosecond , recombination , luminescence , rate equation , radiation , kinetics , biexciton , atomic physics , materials science , scattering , molecular physics , laser , chemistry , optics , physics , condensed matter physics , optoelectronics , quantum mechanics , biochemistry , gene
The characteristic decay times of recombination radiation (P‐band) in CdS (2 × 10 −11 to 2.7 × 10 −9 s) and CdSe (1.7 × 10 −10 to 3.7 × 10 −9 s) monocrystals under different exitation levels, obtained by powerful picosecond light pulses, are measured with the help of a special laser spectrochronograph with a time resolution of 2 × 10 −11 s (sample temperature 77 K). A comparison of the curves obtained for the rise and decay of the intensity of luminescence with the solutions of the system of rate equations for the exciton—exciton scattering processes makes it possible to estimate the values of rate constants of exciton—exciton interaction and of binding of carriers to excitons.