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Resonant secondary radiation in polar semiconductors
Author(s) -
Ivchenko E. L.,
Lang I. G.,
Pavlov S. T.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220850107
Subject(s) - physics , radiation , scattering , limiting , polar , phonon , semiconductor , raman scattering , interference (communication) , resonance (particle physics) , condensed matter physics , optics , raman spectroscopy , atomic physics , quantum mechanics , mechanical engineering , channel (broadcasting) , electrical engineering , engineering
A theory of secondary radiation in semiconductors is presented. The general expression for the differential cross‐section is derived which in the corresponding limiting cases describes off‐resonant light scattering and luminescence and is valid in resonance conditions. The theory developed is applied to the analysis of two‐phonon resonant Raman scattering by longitudinal optical phonons. It is shown that in this case the secondary radiation contains an additional contribution arising from quantum interference, comparable with the main contribution. The additional contribution may lead to a peculiarity of the radiation angular distribution in the backscattering direction.