Premium
Thermopower and the transverse nernst‐ettingshausen effect in semiconductors in a strong electric field
Author(s) -
Babaev M. M.,
Gasymov T. M.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220840210
Subject(s) - condensed matter physics , nernst equation , phonon , nernst effect , electric field , seebeck coefficient , electron , scattering , semiconductor , magnetic field , physics , materials science , electrical resistivity and conductivity , optics , electrode , quantum mechanics
The thermopower and the transverse Nernst‐Ettingshausen effect of semiconductors in strong (heating) electric and nonquantisized magnetic fields are investigated regarding the phonon darg of electrons and the heating of the phonons. The dependences are obtained of the thermopower and Nernst‐Ettingshausen voltage on the electric field strength E 0 . It is shown that in the case of strong electron and phonon heating and impurity scattering of the nondegenerate electrons the electronic part of the thermopower increases α E 0 4/3 , whereas the phonon part α E 0 10/3 , if the phonons are scattered by electrons. But if the phonons are scattered by crystal boundaries the electronic part of the Nernst‐Ettingshausen voltage in weak magnetic fields is α E 0 10/3 , whereas the phonon part is α E 0 4 .