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The effect of internal strain and electrical field of an impurity on electron–phonon interaction in n‐type germanium and silicon
Author(s) -
Singh M. Dhwaj
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220840140
Subject(s) - germanium , phonon , condensed matter physics , impurity , scattering , silicon , electron , electrical resistivity and conductivity , materials science , physics , optics , optoelectronics , quantum mechanics
Considering the effect of internal strains on bound electron‐phonon interaction, one can get an excellent agreement between theory and experiment for n‐type germanium. It is also established that the large decrease in low‐temperature conductivity on n‐type germanium and silicon, caused by an introduction of impurities with concentration ≦ 10 17 , cm −3 , may be explained be explained by scattering of phonons by charge carriers in the effective electric field of the impurity centres for q < 2 k F and by a more consistent consideration of the screening of the phonon‐electron interaction in the region of the long‐wavelength phonons for Ziman scattering for q ≦ 2 k F .