Absorption and luminescence of V (d 3 ) in II–VI compound semiconductors | Zendy

Hoang Le Manh | Zendy; Baranowski J. M. | Zendy

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Absorption and luminescence of V (d 3 ) in II–VI compound semiconductors

Author(s) -

Hoang Le Manh,

Baranowski J. M.

Publication year - 1977

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220840138

Subject(s) - luminescence , impurity , semiconductor , absorption (acoustics) , absorption spectroscopy , crystal (programming language) , compound semiconductor , cadmium telluride photovoltaics , materials science , spectral line , infrared , analytical chemistry (journal) , chemistry , crystallography , optoelectronics , optics , physics , nanotechnology , epitaxy , organic chemistry , chromatography , astronomy , computer science , composite material , programming language , layer (electronics)

The absorption and luminescence spectra of the V (d 3 ) in ZnS, ZnSe, CdSe, and CdTe are presented. Values of the crystal‐field parameters Δ, B , and C are derived from the spectra and discussed. The infrared luminescence at about 5000 cm −1 , characteristic for the V (d 3 ) impurity in II–VI and III–V compound semiconductors, is shown to be due to the 4 A 2 (F)‐ 4 T 2 (F) transition.

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