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Theory of excitons in zincblende‐structure semiconductors in intermediate magnetic fields
Author(s) -
Ekardt W.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220840131
Subject(s) - exciton , condensed matter physics , magnetic field , semiconductor , adiabatic process , physics , field (mathematics) , matrix (chemical analysis) , basis set , electron , transverse plane , basis (linear algebra) , quantum mechanics , chemistry , density functional theory , mathematics , geometry , structural engineering , pure mathematics , engineering , chromatography
A simple numerical method is presented for the calculation of excitonic spectra in real semiconductors like GaAs in intermediate magnetic fields. A proper set of intermediate field functions including nonlinear variational parameters is used for the numerical diagonalization of the exciton matrix with inclusion of the electron‐hole exchange interaction. By the calculation of both the transverse and “longitudinal” levels, a basis is developed for a comparison between theory and experimentally observed splitting pattern in magneto‐reflectivity measurements. A good overall agreement is obtained between theory and experiment in case of GaAs and InP in a region of the magnetic field strength not acceissible up to now neither with low‐field methods nor with the usually adopted adiabatic method in the high‐field case.