Premium
Polarizabilities of donors in elemental semiconductors
Author(s) -
Palaniyandi E.,
Balasubramanian S.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220840119
Subject(s) - bohr radius , polarizability , semiconductor , dielectric , atomic physics , bohr model , ionization energy , radius , shallow donor , effective mass (spring–mass system) , ionization , chemistry , condensed matter physics , materials science , doping , physics , optoelectronics , quantum mechanics , ion , molecule , exciton , computer security , computer science
Using the multivalley effective‐mass theory and the variational method the following expression is obtained for the polarizability α of donors in elemental semiconductors: α = 4 a 4 /[(− a / K ) + + (1/ m *) + 2 E D a 2 ], where a is the effective Bohr radius for the donor, K the static dielectric constant of the host semiconductor, m * the conduction electronic effective mass, and E D the donor ionization energy. The estimates of α for various donors in Si and Ge are discussed.