Polarizabilities of donors in elemental semiconductors | Zendy

Palaniyandi E. | Zendy; Balasubramanian S. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Polarizabilities of donors in elemental semiconductors

Author(s) -

Palaniyandi E.,

Balasubramanian S.

Publication year - 1977

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220840119

Subject(s) - bohr radius , polarizability , semiconductor , dielectric , atomic physics , bohr model , ionization energy , radius , shallow donor , effective mass (spring–mass system) , ionization , chemistry , condensed matter physics , materials science , doping , physics , optoelectronics , quantum mechanics , ion , molecule , exciton , computer security , computer science

Using the multivalley effective‐mass theory and the variational method the following expression is obtained for the polarizability α of donors in elemental semiconductors: α = 4 a 4 /[(− a / K ) + + (1/ m *) + 2 E D a 2 ], where a is the effective Bohr radius for the donor, K the static dielectric constant of the host semiconductor, m * the conduction electronic effective mass, and E D the donor ionization energy. The estimates of α for various donors in Si and Ge are discussed.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research