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Parametric action of a strong radiation field on anisotropic semiconductors
Author(s) -
Anh Vo Hong,
Dat Nguyen Nhu
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220840113
Subject(s) - parametric statistics , wurtzite crystal structure , anisotropy , excitation , condensed matter physics , semiconductor , instability , field (mathematics) , action (physics) , physics , materials science , optics , mathematics , quantum mechanics , statistics , diffraction , pure mathematics
The process of parametric excitation of electromagnetic eigenwaves in the class of uniaxial semiconductors is studied. The instability threshold field values are estimated numerically for a typical sample of a wurtzite structure crystal of CdS.
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