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Dielectric response of saturated semiconductors
Author(s) -
dos Reis F. G.,
Cerdeira Hilda A.,
Luzzi R.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220830229
Subject(s) - dielectric , semiconductor , band gap , coulomb , condensed matter physics , electron , atomic physics , direct and indirect band gaps , physics , particle (ecology) , cross section (physics) , laser , raman spectroscopy , materials science , optics , quantum mechanics , oceanography , geology
The optical properties of a direct‐gap semiconductor are investigated under conditions of a strong optical pumping by an intense laser source of frequency slightly larger than the energy band gap. By taking into account the Coulomb interaction between electrons and holes we found that the energy gap in the quasi‐particle spectrum diminishes. The dielectric constant of the system is calculated in the generalized Hartree‐Fock approximation. The Raman cross‐section is found to vanish for energies below 2Δ, where Δ is the quasi‐particle energy gap.