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Electron energy loss studies of direct nonvertical interband transitions in silicon
Author(s) -
Chen C. H.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220830139
Subject(s) - silicon , atomic physics , momentum transfer , electron , spectral line , momentum (technical analysis) , orientation (vector space) , materials science , condensed matter physics , physics , optics , optoelectronics , nuclear physics , scattering , geometry , mathematics , finance , astronomy , economics
Abstract Direct nonvertical interband transitions in single‐crystal silicon of {001} orientation are detected in the electron energy‐loss spectra for the momentum‐transfer q in the directions of 〈100〉 and 〈110〉. The dependence of the transition energies as a function of q is measured and possible correlations with the energy band structure are discussed.