Electron energy loss studies of direct nonvertical interband transitions in silicon | Zendy

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Electron energy loss studies of direct nonvertical interband transitions in silicon

Author(s) -

Chen C. H.

Publication year - 1977

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220830139

Subject(s) - silicon , atomic physics , momentum transfer , electron , spectral line , momentum (technical analysis) , orientation (vector space) , materials science , condensed matter physics , physics , optics , optoelectronics , nuclear physics , scattering , geometry , mathematics , finance , astronomy , economics

Direct nonvertical interband transitions in single‐crystal silicon of {001} orientation are detected in the electron energy‐loss spectra for the momentum‐transfer q in the directions of 〈100〉 and 〈110〉. The dependence of the transition energies as a function of q is measured and possible correlations with the energy band structure are discussed.

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