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Analytic treatment of stochastic models of crystal growth
Author(s) -
Pfeiffer H.,
Haubenreisser W.,
Klupsch Th.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220830114
Subject(s) - ising model , statistical physics , monte carlo method , kinetic monte carlo , kinetic energy , mean field theory , simple (philosophy) , thermodynamics , component (thermodynamics) , materials science , mathematics , physics , condensed matter physics , classical mechanics , statistics , philosophy , epistemology
The kinetic properties of the solid‐fluid interfaces for one‐component systems are examined by means of the kinetic Ising model in “solid‐on‐solid” restriction. Two different dynamic models corresponding to two different possibilities of interpretation of the Ising model are studied which should be appropriate in describing the growth process from the melt and vapour, respectively. Considering rough interfaces, simple analytic expressions for the growth rate and interface thickness are obtained which are exact within the mean‐field and continuum approximation. The used method and its range of validity are discussed in comparison of available Monte‐Carlo results.