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Influence of Surface Carriers upon the Gralvanomagnetic Effects in Slightly Doped Tellurium Samples at Low Temperatures
Author(s) -
Czaya C.P.,
Keck K.,
Rüthlein H.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220820223
Subject(s) - tellurium , doping , hall effect , acceptor , condensed matter physics , materials science , fermi level , analytical chemistry (journal) , chemistry , electrical resistivity and conductivity , physics , electron , metallurgy , nuclear physics , quantum mechanics , chromatography
The measured temperature dependence of the Hall coefficient of slightly Sb‐doped tellurium samples at low temperatures ( T < 5K) is interpreted in light of surface carriers using a kind of two‐carrier‐model. By application of Fermi statistics the position of acceptor states in slightly Sb‐doped tellurium crystals can be determined from the temperature dependence of the bulk Hall coefficient.