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Scattering of Electrons by the Deformation Potential in Doped InSb
Author(s) -
Demchuk K. M.,
Tsidilkovskii I. M.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220820103
Subject(s) - electron , conduction band , condensed matter physics , thermal conduction , boltzmann equation , impurity , boltzmann constant , scattering , deformation (meteorology) , physics , lattice boltzmann methods , doping , materials science , thermodynamics , quantum mechanics , meteorology
An analysis of the experimental data for InSb and of the theoretical considerations used for the determination of the deformation potential constant of the conduction band ϵ l is made. It is shown that the correctly calculated value of |ϵ 1 | is about 30 eV. The small values of |ϵ 1 | obtained in some works by observing transport phenomena in the hot electron region at lattice temperatures of 4.2 K in samples with electron densities n from 10 15 to lo 17 cm −3 for which the Boltzmann transport equation is valid, are caused by a distortion of the bottom of the conduction band due to fluctuations of the impurity potential.