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Role of Interelectronic Correlation in the Explanation of Paramagnetic Properties of the Impurity‐Vacancy Complex in Silicon
Author(s) -
Tolpygo K. B.,
Telezhkin V. A.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220810255
Subject(s) - ukrainian , vacancy defect , paramagnetism , citation , library science , condensed matter physics , physics , engineering physics , computer science , philosophy , linguistics
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