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Band Formation in Xenon–Argon Alloys Studied by Photoelectron Spectroscopy
Author(s) -
Nürnberger R.,
Himpsel F.J.,
Koch E. E.,
Schwentner N.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220810210
Subject(s) - xenon , argon , atomic physics , x ray photoelectron spectroscopy , synchrotron radiation , excitation , valence band , binding energy , synchrotron , ultraviolet photoelectron spectroscopy , materials science , atom (system on chip) , krypton , noble gas , chemistry , analytical chemistry (journal) , band gap , nuclear magnetic resonance , physics , nuclear physics , chromatography , optoelectronics , quantum mechanics , computer science , embedded system
Photoelectron energy distribution curves for xenon‐argon alloys for concentrations ranging from 0 to 100% are measured by excitation with synchrotron radiation at hv = 13.8, 16.5, and 18.0 eV. With increasing Xe concentration the gradual formation of Xe valence bands starting from the atomic Xe 5p(1/2) and Xe 5p(3/2) states is observed. Similarly with Ar the 3p states are broadened with increasing Ar concentration. Rather high concentrations of Xe or Ar are necessary in order to reach the fully developed Xe or Ar bands, respectively. The results are discussed in terms of a concentration dependent tight binding band structure.