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The EPR Fine Structure Spectrum of Dislocations in Silicon
Author(s) -
Bartelsen L.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220810207
Subject(s) - electron paramagnetic resonance , burgers vector , boron , silicon , spins , condensed matter physics , materials science , unpaired electron , crystallography , dislocation , doping , stress field , molecular physics , nuclear magnetic resonance , chemistry , physics , optoelectronics , organic chemistry , finite element method , thermodynamics
The EPR fine structure spectrum of dislocations in plastically deformed silicon single crystals is measured using pure, boron, and phosphorus doped silicon. The EPR transitions of chains of coupled spins S i = 1/2 are calculated using the following spin Hamiltonian:\documentclass{article}\pagestyle{empty}\begin{document}$$ \hat H = \sum\limits_{i = 1}^n {\mu _{\rm B} {\bf H}g_i S_i - J_{\rm n} } \sum\limits_{i = 1}^{n - 1} {S_i S_{i + 1} } + \sum\limits_{i = 1}^{n - 1} {S_i {\bf D}_{\rm n} S_{i + 1} - J_{{\rm nn}} } \sum\limits_{i = 1}^{n - 2} {S_i S_{i + 2} } + \sum\limits_{i = 1}^{n - 2} {S_i {\bf D}_{{\rm nn}} S_{i + 2}.} $$\end{document} The results reveal that the fine structure spectrum can be explained as caused by transitions taking place in chains of 2, 3, 4, and 5 coupled spins of unpaired electrons in the dislocation core. In heavily boron doped, plastically deformed crystals the EPR signal of boron atoms located in the stress field of the dislocations is found. The main axis of the stress field is nearly parallel to the Burgers vector of the primary glide system.