Premium
Dynamical Response of Electrons in GaAs at 300 K
Author(s) -
Brauer M.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220810113
Subject(s) - electric field , electron , drift velocity , physics , boltzmann equation , scattering , distribution function , population , field (mathematics) , homogeneous , fredholm integral equation , integral equation , computational physics , atomic physics , quantum mechanics , mathematics , mathematical analysis , statistical physics , demography , sociology , pure mathematics
Numerical calculations are made on the time response of the high‐field electron distribution function at T = 300 K in GaAs both for instantaneously and periodically varying electric fields. According to Rees the method of calculation is an iterative process due to Kellogg for solving a homogeneous Fredholm integral equation of the second kind derived from the Boltzmann equation. The time evolution of the average drift velocity, the mean energy of the electrons in the central valley, and the fraction of electrons in the satellite valleys is presented for an instantaneous application E ( t ) = E · θ( t ) of the electric field. Finally the time dependence of the average drift velocity and the satellite valley population fraction is calculated for a sinusoidal electric field E ( t ) = E ac × sin ω t with E ac = 5 kV/cm and ω = 2.2 × 10 11 rad/s. The results obtained are discussed, taking into account the band structure and the effective scattering processes.