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Spin‐Dependent Luminescence of Donor–Acceptor Pairs in Semiconductors. II. Application to Inner Strains
Author(s) -
Thuselt F.,
Unger K.
Publication year - 1977
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220810107
Subject(s) - epitaxy , semiconductor , impurity , luminescence , acceptor , anisotropy , materials science , condensed matter physics , polarization (electrochemistry) , spin (aerodynamics) , crystal (programming language) , molecular physics , chemistry , optoelectronics , optics , physics , nanotechnology , quantum mechanics , thermodynamics , layer (electronics) , computer science , programming language
The influence of inner strains in semiconductor crystals caused i) by impurity misfit and ii) by bending of epitaxial layers on the polarization properties of the emitted pair radiation is theoretically studied with the aid of the general theory developed recently. It is shown that anisotropic pair distributions in the crystal can be detected in this manner. The predictions of the theory for bended epitaxial layers fits well the observations of Vekua et al.